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Samsung plans 8-stacked TSV DDR5 memory modules with up to 512GB total capacity


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At HotChips 33 Samsung confirmed it is developing a DDR5 memory module featuring 8-stacks TSV modules, a double of what DDR4 memory was capable of. This means that theoretically, 512GB memory modules are possible in the future. 


With optimized packaging, Samsung plans to bring eight-stacked packages with lower heights than DDR4 4-stack memory. A reduction of height was possible thanks to a smaller gap between the dies (40% reduction) and by implementing thin wafer handling techniques. Importantly, 8-stack TSV modules would offer better cooling capabilities.


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