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Samsung Commences DDR5 Memory Mass Production on Advanced 14nm EUV Node


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EHW News Editor
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According to Samsung, the new process node will help Samsung's 14nm DDR5 memory to achieve an unprecedented increase in overall speeds. Currently, the 14nm EUV process will push speeds to 7.2 Gbps which is more than twice the speed offered by DDR4 (3.2 Gbps). The company has told us that it will be expanding its 14nm DDR5 memory portfolio to data centers, supercomputers, and enterprise server applications with even denser options based on 24Gb DRAM ICs. This would allow the company to scale their DDR5 memory from 512 GB - 1 TB capacities to 768 GB and 1.5 TB Dram capacities.

 

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